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23 - 27 February 2025
San Jose, California, US

Attend SPIE Advanced Lithography + Patterning

Come to San Jose to participate in the event focused on optical lithography, metrology, and EUV
San Jose, the home of SPIE Advanced Lithography + Patterning

As a center of innovation, San Jose welcomes you

San Jose, California, US boasts the largest concentration of technology expertise in the world and leads the nation in patent generation. The city has 25 companies with 1,000 employees or more, including the headquarters of Adobe Systems, BEA Systems, Cisco, Xilinx, Lam Research, and eBay, as well as major facilities for Flextronics, Hewlett-Packard, IBM, Hitachi, Agilent Technologies, and Lockheed Martin.

Venue

San Jose McEnery Convention Center
150 W San Carlos Street
San Jose, California 95113

Join other leaders eager to learn about emerging technology

Enrich your work by attending the most important conference for optical and EUV lithography, patterning technologies, metrology, and process integration for semiconductor manufacturing and adjacent applications.

Attendees at SPIE Advanced Lithography

Reflecting on the past to prepare for the future

Read information from the 2024 event as we prepare for 2025

Why participate in Advanced Lithography + Patterning?


Technology demonstrated at SPIE Advanced Lithography + Patterning

The latest research

Discover hundreds of presentations from around the world that will be published in the SPIE Digital Library.

Colleagues network at SPIE Advanced Lithography

Connect with colleagues

Take advantage of various technical and networking events to keep you up to date with research and peers.

Plenary speaker at SPIE Advanced Lithography

Plenary events

World-class speakers share insights about the latest challenges and opportunities from industry and academia.

Student Members may qualify for support

SPIE Student Members are encouraged to apply for supplemental travel grants and fee waivers to attend Advanced Lithography + Patterning. Student Members who are presenting authors will be given priority selection, but grants are open to all.

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